Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Description
www.vishay.com
VB30100C-M3, VB30100CHM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
TMBS ®
TO-263AB
K
2
1
VB30100C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
Package
TO-263AB
IF(AV) VRRM
2 x 15 A 100 V
IFSM
160 A
VF at IF = 15 A TJ max.
Diode variations
0.63 V ...
