V54C3512404VE

w w w . D a t a S h e e t 4 U . c o m V54C365(16/80/40)4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 System Frequency (fCK) Clock Cycle Time (tCK3) Clock Access Time (tAC3) CAS Latency = 3 Clock Access Time (tAC2) CAS Latency = 2 166 MHz 6 ns 5.4 ns 5.4 ns 7PC 143 MHz 7 ns 5.4 ns 5.4 ns 7 143 MHz 7 ns 5.4 ns 6 ns 8PC 125 MHz 8 ns 6 ns 6 ns Features ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 4 banks x 1Mbit x 16 organization 4 banks x 2Mbit x 8 organization 4 banks x 4Mbit x 4 organization High speed data transfer rates up to 166 MHz Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge Single Pulsed RAS Interface Data Mask for Read/Write Control Four Banks controlled by BA0 & BA1 Programmable CAS Latency: 2, 3 Programmable Wrap Sequence: Sequential or Interleave Programmable Burst Length: 1, 2, 4, 8, and full page for Sequential Type 1, 2, 4, 8 for Interleave Type Multiple Burst Read with Single Write Operation Automatic and Controlled Precharge Command Random Column Address every CLK (1-N Rule) Power Down Mode Auto Refresh and Self Refresh Refresh Interval: 4096 cycles/64 ms Available in 54-ball FBGA, 60-ball FBGA, and 54-Pin TSOPII LVTTL Interface Single +3.3 V ±0.3 V Power Supply Description The V54C365(16/80/40)4VE is a four bank Synchronous DRAM organized as 4 banks x 1Mbit x 16, 4 banks x 2Mbit x 8, or 4 banks x 4Mbit x 4. The V54C365(16/80/40)4VE achieves high speed data transfer rates up to 166 MHz by employing a chip architecture tha...