V29C51001T

MOSEL VITELIC V29C51001T/V29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 128Kx8-bit Organization Address Access Time: 45, 70, 90 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 8KB Boot Block (lockable) 512 bytes per Sector, 256 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Program Cycle Time: 20µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100µA (Max) Hardware Data Protection Low VCC Program Inhibit Below 2.5V Self-timed program/erase operations with endof-cycle detection – DATA Polling – Toggle Bit CMOS and TTL Interface Available in two versions – V29C51001T (Top Boot Block) – V29C51001B (Bottom Boot Block) Packages: – 32-pin Plastic DIP – 32-pin TSOP-I – 32-pin PLCC s s s s s s s The V29C51001T/V29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention. The V29C51001T/V29C51001B offers a combination of features: Boot Block with Sector Erase Mode. The end of program/erase cycle is detected by DATA Polling of I/O7 or by the Toggle Bit I/O6. The V29C51001T/V29C51001B features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in ...