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V20120C

Part Number	V20120C
Manufacturer	Vishay
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Features	• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL le...
Published	Mar 28, 2012
Datasheet	V20120C PDF File

Features

• Trench MOS Schottky technology 
• Low forward voltage drop, low power losses 
• High efficiency operation 
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22...

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