V10PL45
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount Trench MOS Barrier Schottky Rec...
V10PL45
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.28 V at IF = 5 A
FEATURES
TMBS®
K
eSMP® Series
Very low profile - typical height of 1.1 mm Ideal for automated placement Trench MOS Schottky technology Low forward
voltage drop, low power losses High efficiency operation
1 2
TO-277A (SMPC)
K Cathode Anode 1 Anode 2
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Compliant to RoHS Directive 2011/65/EU Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in low
voltage high frequency DC/DC converters, freewheeling, and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 10 A 45 V 200 A 0.35 V 150 °C
MECHANICAL DATA
Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade
www.DataSheet.co.kr
Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Device marking code Maximum repetitive peak reverse
voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range (AC mode) Notes (1) Mounted on 30 mm x 30 mm pad areas aluminum PCB (2) Free air, mounted on recommended coppe...