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UTO1023 Datasheet

Part Number UTO1023
Manufacturers Agilent Technologies
Logo Agilent Technologies
Description Thin Film Cascadable Amplifier
Datasheet UTO1023 DatasheetUTO1023 Datasheet (PDF)

www.DataSheet4U.com H Avantek Products Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTO/UTC 1023 Series Features • Frequency Range: 10 to 1000␣MHz • High Power: +26.5 dBm (Typ) • Medium Gain: 13.0 dB (Typ) • Temperature Compensated • Low Phase Noise Description The 1023 Series is a thin-film bipolar RF amplifier for higher output power and medium-gain applications up to 1000 MHz. Resistive feedback and active bias assure temperature compensation and increased immunity to bias.

  UTO1023   UTO1023






Part Number UTO1025
Manufacturers Agilent Technologies
Logo Agilent Technologies
Description Thin Film Cascadable Amplifier
Datasheet UTO1023 DatasheetUTO1025 Datasheet (PDF)

www.DataSheet4U.com H Avantek Products 1 Watt Amplifier Technical Data UTO/UTC 1025 Series Features • 1 Watt Output • Wide Bandwidth: 20 to 1000␣MHz • Low Noise Figure: 3 dB (Typ.) • TO-3 and UCS-1P Case Packaging Description The UTO-1025 1 watt amplifier is a low noise figure, high dynamic range amplifier designed to provide broadband high power output for a wide variety of applications. The amplifier uses two GaAs FET stages with active bias to simultaneously achieve high gain, high output.

  UTO1023   UTO1023







Part Number UTO1025
Manufacturers Avantek
Logo Avantek
Description 1W Amplifier
Datasheet UTO1023 DatasheetUTO1025 Datasheet (PDF)

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  UTO1023   UTO1023







Part Number UTO1024
Manufacturers Agilent Technologies
Logo Agilent Technologies
Description Thin Film Cascadable Amplifier
Datasheet UTO1023 DatasheetUTO1024 Datasheet (PDF)

www.DataSheet4U.com H Avantek Products Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTO/UTC 1024 Series Features • Frequency Range: 10 to 1000␣MHz • High Power Output: +24␣dBm (Typ) • Medium Gain: 13.0 dB (Typ) • Temperature Compensated Description The 1024 Series is a thin-film bipolar RF amplifier for higher output power and medium-gain applications up to 1000 MHz. Resistive feedback and active bias assure temperature compensation and increased immunity to bias DataSheet4U..

  UTO1023   UTO1023







Part Number UTO1021
Manufacturers Agilent Technologies
Logo Agilent Technologies
Description Thin Film Cascadable Amplifier
Datasheet UTO1023 DatasheetUTO1021 Datasheet (PDF)

www.DataSheet4U.com H Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC/PPA 1021 Series Features • Frequency Range: 5 to 1000␣MHz • High Gain: 23.0 dB (Typ) • Medium Output Power: +14.0 dBm (Typ) • Temperature Compensated • Surface Mount Option Description The 1021 Series is a two-stage bipolar RF amplifier built on a thin-film substrate. Active bias and resistive feedback provide for stability over temperature and bias voltage variations. Input/ output blo.

  UTO1023   UTO1023







Thin Film Cascadable Amplifier

www.DataSheet4U.com H Avantek Products Thin-Film Cascadable Amplifier 10 to 1000 MHz Technical Data UTO/UTC 1023 Series Features • Frequency Range: 10 to 1000␣MHz • High Power: +26.5 dBm (Typ) • Medium Gain: 13.0 dB (Typ) • Temperature Compensated • Low Phase Noise Description The 1023 Series is a thin-film bipolar RF amplifier for higher output power and medium-gain applications up to 1000 MHz. Resistive feedback and active bias assure temperature compensation and increased immunity to bias DataSheet4U.com voltage variations. Low VSWR is maintained by inductive tuning while the RF is coupled through the amplifier by internal blocking capacitors. The 1023 Series amplifiers are available in either the TO-8 hermetic case or connectored TC-1 package. Pin Configuration UTO—TO-8T RF IN GROUND RFOUT DataShee V+ CASE GROUND UTC—TC-1 Applications • IF/RF Amplification • Output Stage RF IN RF OUT V+ Schematic V+ Maximum Ratings Gain Parameter 7 Maximum Noise Figure, dB Noise Figure RFIN RFOUT DC15 Voltage Continuous RF Input Power 13 Operating Case Temperature 11 Storage Temperature “R” Series Burn-In Temperature Gain, dB 9 50 300 500 700 900 1100 1300 1500 6 5 4 10 +17 Volts +17 dBm –55 to +100°C –62 to +150°C +100°C 200 400 600 800 1000 Thermal Characteristics Frequency, MHz 1 Frequency, MHz θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90°C) 52°C/W2 924/661/661 mW2 48/34/34 °C2 410,200 Hrs.


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