UTCPN2907A

UTC PN2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP General Purpose Amplifier FEATURES This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 1 www.DataSheet4U.com TO-92 1:EMITTER 2:BASE 3:COLLECTOR MAXIMUM RATINGS*(Ta=25°C unless otherwise noted) PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Operating and Storage Junction Temperature Range Note: These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. SYMBOL VCEO VCBO VEBO IC Tj, Tstg VALUE 60 60 5.0 800 -55 to +150 UNITS V V V mA °C ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS DC Current Gain hFE Ic=0.1mA, VCE=10V Ic=1.0 mA,VCE=10V Ic=10 mA,VCE=10V Ic=150 mA,VCE=10V 75 100 100 100 V(BR)CEO V(BR)CBO V(BR)EBO IB ICEX ICBO IC=10mA,IB=0 IC=10μA,IE=0 IE=10μA ,IC=0 VCB=30V,VEB=0.5V VCE=30V,VBE=0.5V VCB=50V,IE=0 VCB=50V,IE=0,TA=150°C 60 60 5.0 50 50 0.02 20 V V V nA nA μA μA SYMBOL TEST CONDITIONS MIN MAX UNITS 300 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-041,A UTC PN2907A PNP EPITAXIAL PLANAR TRANSISTOR Ic=500 mA,VCE=10V 50 0.4 1.6 1.3 2.6 200 8.0 30 VCE(sat) VBE(sat) Ic=150 mA,IB=15mA Ic=500 mA, IB=50mA I...