UT50N03

UNISONIC TECHNOLOGIES CO., LTD UT50N03 50A, 30V N-CHANNEL POWER MOSFET Power MOSFET  FEATURES * RDS(ON) ≤ 14 mΩ @ VGS=10V, ID=30A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified 1 TO-251 1 TO-252 1 TO-252D 1 PDFN3×3  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT50N03L-TM3-T UT50N03G-TM3-T TO-251 UT50N03L-TN3-R UT50N03G-TN3-R TO-252 UT50N03L-TND-R UT50N03G-TND-R TO-252D UT50N03L-P3030-R UT50N03G-P3030-R PDFN3×3 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 Packing G D S - - - - - Tube G D S - - - - - Tape Reel G D S - - - - - Tape Reel S S S G D D D D Tape Reel www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-168.G UT50N03  MARKING TO-251 / TO-252 / TO-252D Power MOSFET PDFN3×3 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-168.G UT50N03 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage TO-251/TO-252 Continuous Drain Current TO-252D PDFN3×3 SYMBOL VDSS VGSS ID RATINGS 30 ±20 50 30 UNIT V V A Pulsed Drain Current (Note 2) IDM 100 A Single Pulsed Avalanche Energy (Note 3) EAS 66 mJ Power Dissipation TO-251/TO-252 TO-252D PD 40 W PDFN3×3 24 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those val...