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UPG2250T5N

CEL

POWER AMPLIFIER

GaAs INTEGRATED CIRCUIT µPG2250T5N 1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The µPG2250T5N is a GaA...


CEL

UPG2250T5N

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Description
GaAs INTEGRATED CIRCUIT µPG2250T5N 1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The µPG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power. This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package. And this package is able to high-density surface mounting. FEATURES Operating frequency Supply voltage Control voltage Circuit current Output power Gain control range High efficiency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) : VDD1, 2, 3 = 1.5 to 3.5 V (1.8 V TYP.) : Vcont = 1.5 to 2.1 V (1.8 V TYP.) : IDD = 100 mA TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pout = +19 dBm : Pout = +20.0 dBm TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = −5 dBm : GCR = 60 dB TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 0 to 1.8 V, Pin = −5 dBm : PAE = 55% TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = −5 dBm High-density surface mounting : 6-pin plastic TSON package (1.5 × 1.5 × 0.37 mm) www.DataSheet4U.com APPLICATION Power Amplifier for Bluetooth Class 1 ORDERING INFORMATION Part Number Order Number Package 6-pin plastic TSON (Pb-Free) Marking G5C Supplying Form Embossed tape 8 mm wide Pin 1, 6 face the perforation side of the tape Qty 3 kpcs/reel µPG2250T5N-E2 µPG2250T5N-E2-A Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2250T5N-A Caution Observe precautions when han...




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