UPG110B

www.DataSheet4U.com 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES WIDE-BAND: 2 to 8 GHz HIGH GAIN: 15 dB at f = 2 to 8 GHz MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω HERMETICALLY SEALED PACKAGE ASSURES HIGH Gain, GP (dB) GAIN vs. FREQUENCY AND TEMPERATURE 20 15 10 5 0 -5 -10 T = -25˚C T = +25˚C T = +75˚C RELIABILITY DESCRIPTION The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage of microwave communication systems where high gain characteristics are required. The UPG110 is available in a 4 pin flat package and in chip form. 0 2 4 6 8 10 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS1 (TA = 25 ± 3°C, ZS = ZL = 50 Ω, VDD = +8 V, f = 2.0 to 8.0 GHz) PART NUMBER PACKAGE OUTLINE SYMBOLS IDD GP ∆GL RLIN RLOUT ISOL P1dB IP3 Supply Current Power Gain Gain Flatness Input Return Loss Output Return Loss Isolation Output Power at 1 dB Compression Point SSB Third Order Intercept Point PARAMETERS UNITS mA dB dB dB dB dB dBm dBm 6 7 30 10 10 10 40 14 25 MIN 65 12 UPG110B/P FA/CHIP TYP 135 15 ±1.5 MAX 180 Note: 1. When handling the device, a ground strap should be used to prevent electric static discharge (ESD) that can damage the IC. California Eastern Laboratories UPG110B, UPG110P ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VDD VIN PIN PT TC TSTG PARAMETERS Drain Voltage Input Voltage Input Power Total Powe...