UPD488448

DATA SHEET µPD488448 for Rev. P 128 M-bit Direct Rambus™ DRAM MOS INTEGRATED CIRCUIT Description The Direct Rambus DRAM (Direct RDRAM™) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The µPD488448 is 128M-bit Direct Rambus DRAM (RDRAM®), organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes). The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The Direct RDRAM’s thirty-two banks support up to four simultaneous transactions. System oriented features for mobile, graphics and large memory systems include power management, byte masking. The µPD488448 is offered in a CSP horizontal package suitable for desktop as well as low-profile add-in card and mobile applications. Direct RDRAMs operate from a 2.5 volt supply. Features Highest sustained bandwidth per DRAM device - 1.6 GB/s sustained data transfer rate - Separate control and data buses for maximized efficiency -...