DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444001
4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT
Description
The µPD444001 is a high speed, low power, 4,194,304 bits (4,194,304 words by 1 bit) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD444001 is packaged in 32-pin PLASTIC SOJ.
Features
4,194,304 words by 1 bit organization Fast access time...
