UPC2763T

3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES 7 dBm P1dB TYPICAL AT 1.9 GHz LOW VOLTAGE: 3 Volts WIDE BANDWIDTH: 2.9 GHz at -3 dB (UPC2762T) Gain, GS (dB) 24 22 UPC2763T 20 18 16 14 UPC2762T 12 UPC2762T UPC2763T GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 27 mA HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T) SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2762T and UPC2763T are Silicon Monolithic integrated circuits which are manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. These amplifiers were designed for 900 MHz and 1.9 GHz receivers in cellular, cordless telephone and PCN applications. Operating on a 3 volt supply these ICs are ideally suited for hand-held, portable designs. NEC's stringent quality assurance and test procedures enwww.DataSheet4U.com sure the highest reliability and performance. 10 8 100 300 1000 3000 Frequency, f (MHz) ELECTRICAL CHARACTERISTICS (TA = 25°C, ZL = ZS = 50Ω, VCC = 3.0 V) PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GS fU1 P1dB PSAT NF RLIN RLOUT ISOL OIP3 RTH (J-A) PARAMETERS AND CONDITIONS Circuit Current (no signal) Small Signal Gain, f = 900 MHz f = 1900 MHz UNITS mA dB dB GHz dBm dBm dBm dBm dB dB dB dB dB dB dB dB dBm dBm °C/W °C/W 6 5.5 8 9 22 20 11 11.5 2.7 +5.5 +4.5 MIN UPC2762T T06 TYP 27 13 14.5 2.9 +8 +7 9 8.5 6.5 7 9 8.5 11 12 27 25 +12 +9 620 230 8 8.5 8 9 5 6 25 24 MAX 35 16 17.5 16 16.5 2.0 +7 +4 MIN UPC2763T T06 TYP 27 2...