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UPC2762TB Datasheet

Part Number UPC2762TB
Manufacturers NEC
Logo NEC
Description 3 V/ 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
Datasheet UPC2762TB DatasheetUPC2762TB Datasheet (PDF)

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2762TB,µPC2763TB,µPC2771TB 3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC2762TB, µPC2763TB and µPC2771TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. Each of the ICs is packaged in super minimold package which is smaller than conventional minimold. The µPC2762TB, µPC2763TB and µPC2771TB have compatible pin connections and performance to .

  UPC2762TB   UPC2762TB






Part Number UPC2762TB
Manufacturers CEL
Logo CEL
Description SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER
Datasheet UPC2762TB DatasheetUPC2762TB Datasheet (PDF)

BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2762TB 3 V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER InsertionPHASE-OPowerUGain,GP(dB)T FEATURES • HIGH P1dB: 7 dBm TYP at 1.9 GHz • LOW VOLTAGE: 3.0 V TYP, 2.7 V MIN • WIDE BANDWIDTH: 2.9 GHz at -3 dB • SUPER SMALL PACKAGE: SOT-363 package • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2762TB is a Silicon Monolithic integrated circuit which is manufactured using the NESAT™ III process. The NESAT™ III process produces transistors with f.

  UPC2762TB   UPC2762TB







3 V/ 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2762TB,µPC2763TB,µPC2771TB 3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC2762TB, µPC2763TB and µPC2771TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. Each of the ICs is packaged in super minimold package which is smaller than conventional minimold. The µPC2762TB, µPC2763TB and µPC2771TB have compatible pin connections and performance to µPC2762T, µPC2763T and µPC2771T of conventional minimold version. So, in the case of reducing your system size, µPC2762TB, µPC2763TB and µPC2771TB are suitable to replace from µPC2762T, µPC2763T and µPC2771T. These IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) • Supply voltage • Medium output power : VCC = 2.7 to 3.3 V : µPC2762TB: PO(1 dB) = +8.0 dBm TYP. @ 0.9 GHz µPC2763TB: PO(1 dB) = +9.5 dBm TYP. @ 0.9 GHz µPC2771TB: PO(1 dB) = +11.5 dBm TYP. @ 0.9 GHz • Power gain : µPC2762TB: GP = 13 dB TYP. @ 0.9 GHz µPC2763TB: GP = 20 dB TYP. @ 0.9 GHz µPC2771TB: GP = 21 dB TYP. @ 0.9 GHz APPLICATIONS • Buffer amplifiers for mobile t.


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