UPC1676G

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1676G GENERAL PURPOSE WIDE BNAD AMPLIFIER DESCRIPTION The µPC1676G is a silicon monolithic integrated circuit employing small package (4pins mini mold) and designed for use as a wide band amplifier covers from HF band to UHF band. FEATURES Excellent frequency response : 1.2 GHz TYP. @ 3 dB down below flat gain. High power gain : 22 dB TYP. @ f = 0.5 GHz. High isolation. Super small package. Uni- and low voltage operation : VCC = 5 V Input and output matching 50 Ω. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Supply Voltage Total Power Dissipation Operating Temperature Storage Temperature VCC PT Topt Tstg 6 200 −40 to +85 −55 to +150 V mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25 °C, VCC = 5 V) CHARACTERISTIC Circuit Current Power Gain Noise Figure Upper Limit Operating Frequency Isolation Input Return Loss Output Return Loss Maximum Output Level SYMBOL ICC GP NF fu ISL RLin RLout PO 1.0 24 9 6 3 MIN. 14 19 TYP. 19 22 4.5 1.2 28 12 9 5 MAX. 24 24 6.0 UNIT mA dB dB GHz dB dB dB dBm TEST CONDITIONS No Signal f = 0.5 GHz f = 0.5 GHz 3 dB down below flat gain f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz, Pin = 0 dBm NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement. Document No. P12447EJ2V0DS00 (2nd edition) (Previous No. IC-1891) Date Published March 1997 N Printed in Japan © 1989 µPC1676G TYPICAL CHARACTERISTICS (TA = 25 °C) CIRCUIT CURRENT vs. S...