NEC's NPN SILICON RF TWIN TRANSISTOR
FEATURES
• • • • LOW VOLTAGE, LOW CURRENT OPERATION SMALL PACKAGE OUTLINE: 1.2 mm x...
NEC's NPN SILICON RF TWIN TRANSISTOR
FEATURES
LOW
VOLTAGE, LOW CURRENT OPERATION SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm LOW HEIGHT PROFILE:
1
UPA862TD
OUTLINE DIMENSIONS
(Units in mm)
Package Outline TD (TOP VIEW)
1.0±0.05 0.8 +0.07 -0.05 (Top View)
0.15±0.05 6
Just 0.50 mm high
0.4
TWO DIFFERENT DIE TYPES: Q1 - Ideal buffer amplifier transistor Q2 - Ideal oscillator transistor
1.2 +0.07 -0.05 0.8
C1
1
Q1
6
B1
vY
2
5
E1
4
0.4
2 Q2
5
E2
IDEAL FOR 1-2 GHz OSCILLATORS
3
C2
3
4
B2
DESCRIPTION
NEC's UPA862TD contains one NE851 and one NE685 NPN high frequency silicon bipolar chip. The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects. The NE685 is an excellent buffer transistor, featuring low noise and high gain. NEC's new ultra small TD package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications.
0.5±0.05 0.125 +0.1 -0.05
PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 3 V, IC = 10 mA GHz pF dB dB nA nA 100 GHz pF dB dB dB 3.0 4.5 5.0 1...
