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UPA833TF Datasheet

Part Number UPA833TF
Manufacturers NEC
Logo NEC
Description NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
Datasheet UPA833TF DatasheetUPA833TF Datasheet (PDF)

PRELIMINARY DATA SHEET µPA833TF NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE Silicon Transistor DESCRIPTION The µPA833TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. PACKAGE DRAWINGS (Unit:mm) 2.10±0.1 1.25±0.1 0.22−0.05 +0.1 1 Q2 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA • High gain Q1 : |S21e|2 = 3.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA Q2 : |S21e|2 .

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NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

PRELIMINARY DATA SHEET µPA833TF NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE Silicon Transistor DESCRIPTION The µPA833TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. PACKAGE DRAWINGS (Unit:mm) 2.10±0.1 1.25±0.1 0.22−0.05 +0.1 1 Q2 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA • High gain Q1 : |S21e|2 = 3.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA Q2 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA • 2 different transistors on-chip (2SC5193, 2SC4959) • 6-pin thin-type small mini mold package 0.65 Q1 : NF = 1.7 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA 1.30 • Low noise 2.00±0.2 0.65 2 3 0.60±0.1 4 5 6 FEATURES ON-CHIP TRANSISTORS Q1 3-pin small mini mold part No. 2SC5193 Q2 2SC4959 PIN CONFIGURATION (Top View) B1 E2 5 B2 4 Q2 2 E1 3 C2 The µPA836TF features the Q1 and Q2 in inverted positions. 6 Q1 1 ORDERING INFORMATION PART NUMBER QUANTITY Loose products (50 pcs) Taping products (3 kpcs/reel) PACKING STYLE 8-mm wide embossed tape. Pin 6 (Q1 Base), pin 5 (Q2 Emitter), and pin 4 (Q2 Base) face perforated side of tape. C1 µPA833TF µPA833TF-T1 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) Caution is required concerning excess input, such as from static electricity, because the high-frequency process is used for this device. The information in this .


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