UPA828TF

PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 u 2SC5184) THIN-TYPE SMALL MINI MOLD FEATURES Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 6-pin thin-type small mini mold package adopted Built-in 2 transistors (2 u 2SC5184) PACKAGE DRAWINGS (Unit: mm) 2.10±0.1 1.25±0.1 1.30 ORDERING INFORMATION Part Number Quantity Loose products (50 pcs) Taping products (3 kpcs/reel) Packing Style 2.00±0.2 0.65 2 0.65 3 PPA828TF PPA828TF-T1 0.60±0.1 Remark If you require an evaluation sample, please contact an NEC Sales Representative (Unit sample quantity is 50 pcs). PIN CONFIGURATION (Top View) B1 Unit V V V mA mW ABSOLUTE MAXIMUM RATINGS (TA = 25qC) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol VCBO VCEO VEBO IC PT Rating 5 3 2 30 90 in 1 element 180 in 2 elements 150 ð65 to +150 E2 5 6 Q1 1 C1 2 E1 0 to 0.1 B2 4 Q2 3 C2 Junction Temperature Storage Temperature Tj Tstg °C °C PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) Caution is required concerning excess input, such as from static electricity, due to the high-precision fabrication processes used for this device. The information in this document is subject to change without notice. Docum...