UPA809T

PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA809T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current PACKAGE DRAWINGS (Unit: mm) 2.1±0.1 1.25±0.1 0.65 0.65 1.3 IC = 100 mA A Mini Mold Package Adopted Built-in 2 Transistors (2 × 2SC5193) 2.0±0.2 2 3 0.9±0.1 ORDERING INFORMATION PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape. 0.7 4 5 µPA809T PIN CONFIGURATION (Top View) µPA809T-T1 Taping products (3 KPCS/Reel) 6 Q1 5 4 Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) 0~0.1 Q2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation SYMBOL VCBO VCEO VEBO IC PT RATING 9 6 2 100 150 in 1 element 200 in 2 elements Note 150 –65 to +150 UNIT V V V mA mW 1 2 3 PIN CONNECTIONS 4. Emitter (Q2) 1. Collector (Q1) 5. Base (Q2) 2. Emitter (Q1) 6. Base (Q1) 3. Collector (Q2) Junction Temperature Storage Temperature Tj Tstg ˚C ˚C Note 110 mW must not be exceeded in 1 element. This device uses rad...