DATA SHEET
SILICON TRANSISTOR
µPA807T
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2...
DATA SHEET
SILICON TRANSISTOR
µPA807T
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
FEATURES
Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz A Super Mini Mold Package Adopted Built-in 2 Transistors (2 × 2SC5179)
2.0±0.2
PACKAGE DRAWINGS (Unit: mm)
2.1±0.1 1.25±0.1
1.3
ORDERING INFORMATION
PART NUMBER QUANTITY Loose products (50 PCS) Taping products (3 KPCS/Reel) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape.
0.65
2
µPA807T µPA807T-T1
0.65
3
0.9±0.1
pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER Collector to Base
Voltage Collector to Emitter
Voltage Emitter to Base
Voltage Collector Current Total Power Dissipation SYMBOL VCBO VCEO VEBO IC PT RATING 5 3 2 10 30 in 1 element 60 in 2 elements 150 –65 to +150 UNIT V V V mA mW
PIN CONFIGURATION (Top View)
6 Q1
0 to 0.1
NEC Sales Representative. (Unit sample quantity is 50
5
4
Q2
1
2
3
Junction Temperature Storage Temperature
Tj Tstg
°C °C
PIN CONNECTIONS 1. Collector (Q1) 4. Emitter (Q2) 2. Emitter (Q1) 5. Base (Q2) 3. Collector (Q2) 6. Base (Q1)
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. P12153EJ2V0DS00 (2nd edition) (Previous No. ID-3641) Date Published November...
