isc Silicon NPN RF Transistor
DESCRIPTION ·With SOT-363 packaging ·Low voltage use ·Ultra super mini mold package ·Mini...
isc Silicon NPN RF Transistor
DESCRIPTION ·With SOT-363 packaging ·Low
voltage use ·Ultra super mini mold package ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in low noise and small signal
amplifiers
from VHF band to UHF band
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base
Voltage
9
UNIT V
VCEO
Collector-Emitter
Voltage
6
V
VEBO
Emitter-Base
Voltage
2
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Max.Junction Temperature
10
mA
120
mW
150
℃
Tstg
Storage Temperature Range
-60~150
℃
UPA805T
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isc Silicon NPN RF Transistor
UPA805T
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified, Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 %
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
ICBO
Collector Cutoff Current
VCB= 5V; IE= 0
0.1 μA
IEBO
Emitter Cutoff Current
VEB= 1V; IC= 0
0.1 μA
hFE
DC Current Gain
IC= 5mA ; VCE= 3V
90
150
fT
Current-Gain—Bandwidth Product IC= 7mA ; VCE= 3V ;f=2.0GHz
12
GHz
Cre
Feed-Back Capacitance
IE= 0 ; VCB= 3V;f= 1.0MHz
0.4 0.5 pF
︱S21e︱2 Insertion Power Gain
IC= 5mA ; VCE= 3V;f= 2.0GHz
7
9
dB
NF
Noise Figure
IC= 3mA ; VCE= 3V;f= 1.0GHz
2
4.0 dB
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained her...
