UPA801T

isc Silicon NPN RF Transistor DESCRIPTION ·With SOT-363 packaging ·Low voltage use ·Ultra super mini mold package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 20 UNIT V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Max.Junction Temperature 100 mA 150 mW 150 ℃ Tstg Storage Temperature Range -60~150 ℃ UPA801T isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor UPA801T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified, Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 % SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 0.1 μA hFE DC Current Gain IC= 7mA ; VCE= 3V 90 250 fT Current-Gain—Bandwidth Product IC= 7mA ; VCE= 3V ;f=1GHz 4.5 GHz Cre Feed-Back Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.65 pF ︱S21e︱2 Insertion Power Gain IC= 7mA ; VCE= 3V;f= 1.0GHz 11 dB NF Noise Figure IC= 7mA ; VCE= 3V;f= 1.0GHz 1.4 2.0 dB NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained ...