UPA611TA

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA611TA N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The µPA611TA is a switching device which can be driven directly by a 2.5-V power source. The µPA611TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. PACKAGE DRAWING (Unit : mm) 0.65 +0.1 –0.15 0.32 +0.1 –0.05 0.16 +0.1 –0.06 2.8 ±0.2 1.5 0 to 0.1 FEATURES Can be driven by a 2.5-V power source Low gate cut-off voltage 0.95 0.95 1.9 2.9 ±0.2 0.8 1.1 to 1.4 ORDERING INFORMATION PART NUMBER PACKAGE EQUIVALENT CIRCUIT (1/2 Circuit) µPA611TA Drain SC-74 (Mini Mold) Internal Diode Gate ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30 ±20 ±0.1 ±0.4 300 (TOTAL) 150 –55 to +150 V V A A mW °C °C Gate Protection Diode Source PIN CONNECTION (Top View) 6 5 4 1. Source 1 2. Source 2 3. Gate 2 4. Drain 2 5. Gate 1 6. Drain 1 Total Power Dissipation Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty Cycle ≤ 1 % 1 2 3 Marking : IB Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject t...