UPA606T

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA606T N-CHANNEL MOS FET (6-PIN 2 CIRCUITS) FOR SWITCHING The µPA606T is a mini-mold device provided with two MOS FET elements. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.65 +0.1 –0.15 0.32 +0.1 –0.05 0.16 –0.06 +0.1 FEATURES Two MOS FET elements in package the same size as SC-59 Complement to µPA607T Automatic mounting supported 2.8 ±0.2 1.5 0 to 0.1 0.95 0.95 1.9 0.8 1.1 to 1.4 2.9 ±0.2 PIN CONNECTION 6 5 4 1 2 3 1. 2. 3. 4. 5. 6. Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse)* PT Tch Tstg RATINGS 50 ± 20 100 200 300 (Total) 150 –55 to +150 UNIT V V mA mA mW ˚C ˚C * PW ≤ 10 ms, Duty Cycle ≤ 50 % Document No. G11253EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 µPA606T ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf VGS(on) =...