UPA1857

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1857 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1857 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit: mm) 5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2 1.2 MAX. 1.0±0.05 0.25 ° 3° +5 –3° FEATURES Low on-state resistance RDS(on)1 = 67.0 mΩ MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 86.0 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A) RDS(on)3 = 95.0 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A) Low Ciss Ciss = 580 pF TYP. Built-in G-S protection diode against ESD 0.1±0.05 1 4 0.5 0.6 +0.15 –0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE Power TSSOP8 0.65 0.27 +0.03 –0.08 0.8 MAX. µ PA1857GR-9JG 0.1 0.10 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 Note2 Note2 EQUIVALENT CIRCUIT 60 ±20 ±3.8 ±15.2 1.0 1.7 150 V V A A W W °C °C A mJ Gate1 Gate Protection Diode Source1 Drain1 Drain2 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg Body Diode Gate2 Gate Protection Diode Source2 Body Diode Total Power Dissipation (1unit) Total Power Dissipation (2unit) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy –55 to +150 3.8 33 Note3 Note3 IAS EAS N...