UPA1816

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1816 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1816 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on. FEATURES 1.8 V drive available Low on-state resistance RDS(on)1 = 15 mΩ MAX. (VGS = −4.5 V, ID = −4.5 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −4.5 A) RDS(on)3 = 22.5 mΩ MAX. (VGS = −2.5 V, ID = −4.5 A) RDS(on)4 = 41.5 mΩ MAX. (VGS = −1.8 V, ID = −2.5 A) Built-in G-S protection diode against ESD PACKAGE DRAWING (Unit: mm) 85 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 1.2 MAX. 1.0 ±0.05 0.25 14 3° +5° –3° 0.1 ±0.05 0.5 0.6 +0.15 –0.1 3.15 ±0.15 3.0 ±0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.2 0.145 ±0.055 ORDERING INFORMATION PART NUMBER µPA1816GR-9JG PACKAGE Power TSSOP8 0.65 0.8 MAX. 0.27 +0.03 –0.08 0.10 M 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 Total Power Dissipation Note2 ID(DC) ID(pulse) PT Channel Temperature Tch Storage Temperature Tstg −12 m 8.0 m 9.0 m 36 2.0 150 −55 to +150 V V A A W °C °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm EQUIVALENT CIRCUIT Drain Gate Body Dio...