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UPA1755 Datasheet

Part Number UPA1755
Manufacturers NEC
Logo NEC
Description N-Channel Power MOSFET
Datasheet UPA1755 DatasheetUPA1755 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1755 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max. +0.10 –0.05 DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Dual chip type • Low on-resistance 1.44 RDS(on)1 = 32 mΩ MAX. (VGS = 10 V, ID = 3.5 A) • Low .

  UPA1755   UPA1755






Part Number UPA1759
Manufacturers NEC
Logo NEC
Description N-Channel Power MOSFET
Datasheet UPA1755 DatasheetUPA1759 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1759 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max. +0.10 –0.05 DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. FEATURES • Dual chip type • Low on-resistance RDS(on)1 = 110 mΩ TYP. (VGS = 10 V, ID = 2.5 A) 1.44 RDS(on)2 = 170 mΩ TYP. (VGS = 4 V, ID = 2.5 A) • Built-in G-.

  UPA1755   UPA1755







Part Number UPA1758
Manufacturers NEC
Logo NEC
Description N-Channel Power MOSFET
Datasheet UPA1755 DatasheetUPA1758 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1758 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. FEATURES • Dual MOS FET chips in small package • 2.5 V gate drive type low on-state resistance RDS(on)1 = 30 mΩ (MAX.) (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.0 A) • Low Ciss : Ciss = 1100 pF (TYP.) •.

  UPA1755   UPA1755







Part Number UPA1757
Manufacturers NEC
Logo NEC
Description N-Channel Power MOSFET
Datasheet UPA1755 DatasheetUPA1757 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1757 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Description This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. 8 Package Drawing (Unit : mm) 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 Features • Dual MOS FET chips in small package • 2.5 V gate drive type and low on-resistance RDS(on)1 = 23 mΩ (MAX.) (.

  UPA1755   UPA1755







Part Number UPA1756
Manufacturers NEC
Logo NEC
Description N-Channel Power MOSFET
Datasheet UPA1755 DatasheetUPA1756 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1756 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. PACKAGE DRAWING (Unit : mm) 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max. +0.10 –0.05 FEATURES • Dual MOS FET chips in small package • 2.5-V gate drive type and low on-resistance .

  UPA1755   UPA1755







N-Channel Power MOSFET

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1755 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max. +0.10 –0.05 DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Dual chip type • Low on-resistance 1.44 RDS(on)1 = 32 mΩ MAX. (VGS = 10 V, ID = 3.5 A) • Low input capacitance Ciss = 895 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 1.8 Max. 6.0 ±0.3 4.4 0.8 RDS(on)2 = 45 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 +0.10 –0.05 EQUIVALENT CIRCUIT (1/2 Circuit) Drain µPA1755G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.) Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (pulse) Note1 Note2 Note2 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 30 ±20 ±7.0 ±28 1.7 2.0 150 –55 to + 150 2 V V A A W W °C °C Gate Body Diode Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. TA = 25 °C, Mounted on ceramic substrate of 2000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor.


2005-04-17 : 2SK1792    7611    7611D2    74LS192    7425    LA7830    IDT74FCT827B    IDT74FCT827BT    IDT74FCT827C    IDT74FCT827CT   


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