UPA1741TP

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1741TP SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8, 9 ; Drain The µPA1741TP is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. www.DataSheet4U.com FEATURES High voltage: VDSS = 250 V Gate voltage rating: ±30 V Low on-state resistance RDS(on) = 0.79 Ω MAX. (VGS = 10 V, ID = 2.5 A) Low input capacitance Ciss = 340 pF TYP. (VDS = 10 V, VGS = 0 V) Built-in gate protection diode Small and surface mount package (Power HSOP8) 1.49 ±0.21 1.44 TYP. 1 5.2 +0.17 –0.2 4 0.8 ±0.2 S +0.10 –0.05 6.0 ±0.3 4.4 ±0.15 0.05 ±0.05 0.15 1.27 TYP. 0.40 1 +0.10 –0.05 0.10 S 0.12 M ORDERING INFORMATION 2.9 MAX. 2.0 ±0.2 9 4.1 MAX. PART NUMBER PACKAGE Power HSOP8 8 µPA1741TP 5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted. All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg Note2 250 ±30 ±5.0 ±15 21 1 150 −55 to +150 5.0 2.5 5.0 2.5 V V A A W W °C °C A mJ A mJ Gate Protection Diode Source Gate Body Diode Drain 1.1 ±0.2 4 EQUIVALENT CIRCUIT Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche...