UPA1740TP

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1740TP PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8, 9 : Drain SWITCHING N-CHANNEL POWER MOS FET The µPA1740TP is N-channel MOS FET device that features a low on-state resistance and excellent swiching characteristics, and designed for high voltage applications such as DC/DC converter. www.DataSheet4U.com DESCRIPTION FEATURES High voltage: VDSS = 200 V Gate voltage rating: ±30 V Low on-state resistance RDS(on) = 0.44 Ω MAX. (VGS = 10 V, ID = 3.5 A) Low input capacitance Ciss = 420 pF TYP. (VDS = 10 V, VGS = 0 V) Built-in gate protection diode Small and surface mount package (Power HSOP8) Avalanche capability rated 1.49 ±0.21 1.44 TYP. 1 5.2 +0.17 –0.2 4 0.8 ±0.2 S +0.10 –0.05 6.0 ±0.3 4.4 ±0.15 0.05 ±0.05 0.15 1.27 TYP. 0.40 1 +0.10 –0.05 0.10 S 0.12 M 2.0 ±0.2 2.9 MAX. ORDERING INFORMATION PART NUMBER µPA1740TP PACKAGE Power HSOP8 8 9 4.1 MAX. 5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg Note2 200 ±30 ±7.0 ±21 22 1.0 150 –55 to + 150 7.0 4.9 7.0 2.2 V V A A W W °C °C A mJ A mJ Gate Protection Diode Source Gate Body Diode Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Si...