DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1721
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Uni...
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1721
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
DESCRIPTION
The µPA1721 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.
FEATURES
Low on-resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A)
1.44
RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)
1.8 MAX.
1 5.37 MAX.
4
6.0 ±0.3 4.4
+0.10 –0.05
0.8
RDS(on)3 = 17.0 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A) Low Ciss: Ciss = 2200 pF TYP. Built-in G-S protection diode Small and surface mount package (Power SOP8)
0.15
0.05 MIN.
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 –0.05
0.12 M
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1721G
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source
Voltage (VGS = 0 V) Gate to Source
Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2
EQUIVALENT CIRCUIT
Drain
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
30 ±20 ±10 ±40 2.0 150 –55 to +150
V V A A W °C °C
Gate Protection Diode Source Gate
Body Diode
Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm x 2.2 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional pro...