UPA1717

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1717 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain DESCRIPTION The µPA1717 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers. FEATURES Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = −10 V, ID = −3 A) 1.44 RDS(on)2 = 59 mΩ MAX. (VGS = −4.5 V, ID = −3 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10 –0.05 Low Ciss : Ciss = 830 pF TYP. Built-in G-S protection diode Small and surface mount package (Power SOP8) 0.8 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 0.12 M µPA1717G ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVALENT CIRCUIT Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg −30 # 25 #6 # 24 V V A A W °C °C Gate Protection Diode Source Gate Body Diode Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature 2.0 150 –55 to +150 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rate...