UPA1560

DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µ PA1560 N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The µPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. PACKAGE DRAWING (Unit : mm) 26.8 MAX. 4.0 10 FEATURES Full mold package with 4 circuits 4 V driving is possible Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 200 mΩ MAX. (VGS = 4 V, ID = 1.5 A) Low input capacitance Ciss = 600 pF TYP. 2.54 1.4 0.6±0.1 1 2 3 4 5 6 7 8 910 EQUIVALENT CIRCUIT 3 5 7 9 ORDERING INFORMATION PART NUMBER PACKAGE 10-pin SIP 2 1 4 6 8 10 µ PA1560H ELECTRODE CONNECTION 2, 4, 6, 8 : Gate 3, 5, 7, 9 : Drain 1, 10 : Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT1 PT2 Tch Tstg 120 ±20 + 20, –10 ±3.0 ±12 28 3.7 150 –55 to + 150 3.0 0.9 V V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25 °C, VDD = 60 V, RG = 25 Ω, VGS = 20 V ¡ 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actuall...