UPA1552

DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1552B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The µPA1552B is N-channel Power MOS FET Array that built in 4 circuits designed, for solenoid, motor and lamp driver. PACKAGE DIMENSIONS in millimeters 26.8 MAX. 10 4.0 FEATURES Large Current and Low On-state Resistance ID(DC) = ± 5.0 A RDS(on)1 ≤ 0.18 Ω MAX. (VGS = 10 V, ID = 3 A) RDS(on)2 ≤ 0.24 Ω MAX. (VGS = 4 V, ID = 3 A) Low Input Capacitance Ciss = 200 pF TYP. 1 2 3 4 5 6 7 8 9 10 1.4 0.6±0.1 2.5 4 V driving is possible 2.54 1.4 0.5±0.1 ORDERING INFORMATION Type Number Package 10 Pin SIP 2 3 CONNECTION DIAGRAM 5 7 9 µPA1552BH 4 6 8 10 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy VDSS Note 1 VGSS Note 2 ID(DC) ID(pulse) Note 3 PT1 Note 4 PT2 Note 5 TCH Tstg IAS Note 6 EAS Note 6 60 ± 20 ± 5.0 ± 20 28 3.5 150 –55 to +150 5.0 2.5 V V A/unit A/unit W W ˚ C ˚ C A mJ 1 ELECTRODE CONNECTION 2, 4, 6, 8 : Gate 3, 5, 7, 9 : Drain 1, 10 : Source Notes 1. VGS = 0 3. PW ≤ 10 µs, Duty Cycle ≤ 1 % 5. 4 Circuits, TA = 25 ˚C 2. VDS = 0 4. 4 Circuits, TC = 25 ˚C 6. Starting TCH = 25 ˚C, V DD = 30 V, VGS = 20 V → 0, RG = 25 Ω, L = 100 µH The diode connected between the gate and source of the transistor serves as a protector against ESD...