COMPOUND FIELD EFFECT TRANSISTOR ARRAY
www.DataSheet4U.com
DATA SHEET COMPOUND FIELD EFFECT TRANSISTOR ARRAY
µPA1550
N-CHANNEL POWER MOS FET ARRAY FOR SWITCH...
Description
www.DataSheet4U.com
DATA SHEET COMPOUND FIELD EFFECT TRANSISTOR ARRAY
µPA1550
N-CHANNEL POWER MOS FET ARRAY FOR SWITCHING
µPA1550 is a N-channel vertical power MOS FET and this
switching device is available for direct drive by output of 5 V power supply IC. This device features low on-resistance and excellent switching characteristic, and is ideal for control of devices such as mortars, solenoid, or ramp.
PACKAGE DRAWING (UNIT: mm)
FEATURES
Gate drive available at logic level (VGS = 4 V) High current capacity and low on-resistnace ID(pulse) = ±20 A RDS(on) = 0.09 Ω TYP. @VGS = 10 V RDS(on) = 0.11 Ω TYP. @VGS = 4 V Easy to mount the printing board due to 2.54 mm (0.1 inch) interval of lead pins DataSheet4U.com Small dimension and no electrode exposure except lead pins enable the high density mounting.
ELECTRODE CONNECTION
DataShee
ORDERING INFORMATION
Part Number Package 10-pin SIP Quality Standard
µPA1550H
2, 4, 6, 8 : Gate (G) 3, 5, 7, 9 : Drain (D) 1, 10 : Source (S)
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
INTERNAL EQUIVALENT CIRCUIT
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
DataSheet4U.com
Not all devices/types available in every country. Please check with local NEC representative for ...
Similar Datasheet