UN8231A

Transistors with built-in Resistor UN8231/UN8231A Silicon NPN epitaxial planer transistor Unit: mm 0.15 For switching 6.9±0.1 0.7 4.0 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.65 max. q 0.45–0.05 +0.1 Parameter Collector to base voltage UN8231 UN8231A Symbol VCBO VCEO ICP IC PT* Tj Tstg Ratings 20 60 20 50 1.5 0.7 1 150 –55 to +150 Unit V UN8231 Collector to emitter voltage UN8231A Peak collector current Collector current Total power dissipation Junction temperature Storage temperature 1 : Emitter 2 : Collector 3 : Base MT-2 Type Package V A A W ˚C ˚C R1(1kΩ) Internal Connection 2.5±0.1 s Absolute Maximum Ratings 1 2 3 (Ta=25˚C) 0.45–0.05 +0.1 2.5±0.5 2.5±0.5 C B R2 (47kΩ) * Printed circuit board: Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. E s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to base voltage UN8231 UN8231A UN8231 UN8231A (Ta=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE* VCE(sat)* R1 R1/R2 fT VCB = 10V, IE = –50mA, f = 200MHz Conditions VCB = 15V, IE = 0 VCE = 15V, IB = 0 VEB = 14V, IC = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 VCE = 10V, IC = 150mA IC = 500mA, IB = 5mA 0.7 0.016 1 0.021 200 20 60 20 50 800 2100 0.4 1.3 0.025 MHz *Pulse measurement V kΩ min typ max 1 10 0.5 Unit µA µA mA V Collector to emitter voltage 14.5±0.5 q 1.0 1.0 q High forward current transfer ratio hFE. Resistor built-in type, allowing downsizing of the e...