Transistors with built-in Resistor
UN6221/6222/6223/6224
Silicon NPN epitaxial planer transistor
For digital circuits
U...
Transistors with built-in Resistor
UN6221/6222/6223/6224
Silicon NPN epitaxial planer transistor
For digital circuits
Unit: mm
0.15
s
q q
Features
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping.
6.9±0.1 0.7 4.0
1.05 2.5±0.1 (1.45) ±0.05 0.8
0.65 max. 14.5±0.5 0.45–0.05
+0.1
s Resistance by Part Number
q q q q
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings 50 50 500 600 150 –55 to +150 Unit V V mA mW ˚C ˚C
1 : Emitter 2 : Collector 3 : Base MT-1 Type Pakage
Internal Connection
R1
2.5±0.1
UN6221 UN6222 UN6223 UN6224
(R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ
(R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ
0.45–0.05 2.5±0.5 1 2 2.5±0.5 3
+0.1
0.85
1.0
C
B
R2
E
3.5±0.1
0.8
1
Transistors with built-in Resistor
UN6221/6222/6223/6224
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current UN6221 UN6222 UN6223/6224
(Ta=25˚C)
Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) VOH VOL fT R1 Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCE = 10V, IC = 100mA IC = 100mA, IB = 5mA VCC = 5V, VB = 0.5V, RL = 500Ω VCC = 5V, VB = 3.5V, RL = 500Ω VCB = 10V, IE = –50mA, f = 200MHz (–30%) 200 2.2 4.7 10 R1/R2 0.8 0.17 1.0 0.22 1.2 0.27 (+30%) kΩ 4....