Transistors with built-in Resistor
UN6121/6122/6123/6124/612X/612Y
Silicon PNP epitaxial planer transistor
For digital ...
Transistors with built-in Resistor
UN6121/6122/6123/6124/612X/612Y
Silicon PNP epitaxial planer transistor
For digital circuits
Unit: mm
0.15
s
q q
Features
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping.
6.9±0.1 0.7 4.0
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.65 max.
1.0
s Resistance by Part Number
q q q q q q
UN6121 UN6122 UN6123 UN6124 UN612X UN612Y
(R1) 2.2kΩ 4.7KΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ
(R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5kΩ 4.6kΩ
0.45–0.05
+0.1
1
2
3
0.45–0.05
2.5±0.5
2.5±0.5
+0.1
1 : Emitter 2 : Collector 3 : Base MT-1 Type Pakage
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings –50 –50 –500 600 150 –55 to +150 Unit V V mA mW ˚C ˚C
R1
Internal Connection
2.5±0.1
C
B
R2
E
14.5±0.5
0.85
3.5±0.1
0.8
1
Transistors with built-in Resistor
UN6121/6122/6123/6124/612X/612Y
s Electrical Characteristics
Parameter Collector cutoff current UN612X Collector cutoff current UN612X Emitter cutoff current UN6121 UN6122/612X/612Y UN6123/6124
(Ta=25˚C)
Symbol ICBO ICBO ICEO ICEO IEBO VCBO VCEO Conditions VCB = –50V, IE = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VCE = –50V, IB = 0 VEE = –6V, IC = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 –50 –50 40 hFE VCE = –10V, IC = –100mA 50 60 20 VCE(sat) VC...