UN4224

Transistors with built-in Resistor UN4221/4222/4223/4224 Silicon NPN epitaxial planer transistor For digital circuits 4.0±0.2 3.0±0.2 Unit: mm q q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. marking +0.2 0.45–0.1 0.7±0.1 q q q q UN4221 UN4222 UN4223 UN4224 (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ (Ta=25˚C) Ratings 50 50 500 300 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 2 3 1.27 1.27 2.54±0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg 1 : Emitter 2 : Collector 3 : Base New S Type Package Internal Connection R1 2.0±0.2 s Resistance by Part Number 15.6±0.5 s Features C B R2 E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current UN4221 UN4222 UN4223/4224 (Ta=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) VOH VOL R1 Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCE = 10V, IC = 100mA IC = 100mA, IB = 5mA VCC = 5V, VB = 0.5V, RL = 500Ω VCC = 5V, VB = 3.5V, RL = 500Ω 2.2 (–30%) 4.7 10 R1/R2 0.8 0.17 1.0 0.22 1.2 0.27 (+30%) kΩ 4.9 0.2 50 50 40 50 60 0.25 V V V min typ max 1 1 5 2 1 V V mA Unit µA µA Collector to base voltage Collector to emitter voltage Forward current transfer ratio UN...