Transistors with built-in Resistor
UN4121/4122/4123/4124/412X/412Y
Silicon PNP epitaxial planer transistor
For digital ...
Transistors with built-in Resistor
UN4121/4122/4123/4124/412X/412Y
Silicon PNP epitaxial planer transistor
For digital circuits
q
q
s Resistance by Part Number
q q q q q q
UN4121 UN4122 UN4123 UN4124 UN412X UN412Y
(R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ
(R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5.0kΩ 4.6kΩ
0.7±0.1
1
2
3
1.27 1.27 2.54±0.15
1 : Emitter 2 : Collector 3 : Base New S Type Package
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings –50 –50 –500 300 150 –55 to +150 Unit V V mA mW ˚C ˚C
R1
Internal Connection
2.0±0.2
marking
+0.2 0.45–0.1
15.6±0.5
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping.
3.0±0.2
s
Features
4.0±0.2
Unit: mm
C
B
R2
E
1
Transistors with built-in Resistor
UN4121/4122/4123/4124/412X/412Y
s Electrical Characteristics
Parameter Collector cutoff current UN412X Collector cutoff current UN412X Emitter cutoff current UN4121 UN4122/412X/412Y UN4123/4124
(Ta=25˚C)
Symbol ICBO ICBO ICEO ICEO IEBO VCBO VCEO Conditions VCB = –50V, IE = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 –50 –50 40 hFE VCE = –10V, IC = –100mA 50 60 20 VCE(sat) VCE(sat) VCE(sat) VOH VOL fT IC = –100mA, IB = –5mA IC = –10mA...