UN4118

Transistors with built-in Resistor UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transistor For digital circuits 4.0±0.2 3.0±0.2 Unit: mm s Features q q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. 1 2 3 q q q q q q q q q q q q q q q UN4111 UN4112 UN4113 UN4114 UN4115 UN4116 UN4117 UN4118 UN4119 UN4110 UN411D UN411E UN411F UN411H UN411L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 1.27 1.27 2.54±0.15 1 : Emitter 2 : Collector 3 : Base New S Type Package Internal Connection R1 2.0±0.2 s Resistance by Part Number 0.7±0.1 marking +0.2 0.45–0.1 15.6±0.5 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 UN4111/4112/4113/4114/4115/4116/4117/4118/ Transistors with built-in Resistor 4119/4110/411D/411E/411F/411H/411L s Electrical Characteristics Parameter Collector cutoff current UN4111 UN4112/4114/411E/411D Emitter cutoff current UN4113 UN4115/4116/4117/4110 UN411F/411H UN4119 UN4118/411L Collector to base voltage Collector to emitter voltage UN...