Transistors with built-in Resistor
UN2221/2222/2223/2224
Silicon NPN epitaxial planer transistor
For digital circuits
0...
Transistors with built-in Resistor
UN2221/2222/2223/2224
Silicon NPN epitaxial planer transistor
For digital circuits
0.65±0.15 2.8 –0.3
+0.2
Unit: mm
0.65±0.15
1.5 –0.05
+0.25
0.95
2.9 –0.05
1
q
q
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.
1.9±0.2
+0.2
0.95
3
1.45 0 to 0.1
s Features
2
s Resistance by Part Number
q q q
0.1 to 0.3 0.4±0.2
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings 50 50 500 200 150 –55 to +150 Unit V V mA mW ˚C ˚C
1:Base 2:Emitter 3:Collector
0.8
q
UN2221 UN2222 UN2223 UN2224
Marking Symbol 9A 9B 9C 9D
(R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ
(R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ
1.1 –0.1
EIAJ:SC-59 Mini Type Package
Internal Connection
R1
C
B
R2
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current UN2221 UN2222 UN2223/2224
(Ta=25˚C)
Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) VOH VOL fT R1 Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCE = 10V, IC = 100mA IC = 100mA, IB = 5mA VCC = 5V, VB = 0.5V, RL = 500Ω VCC = 5V, VB = 3.5V, RL = 500Ω VCB = 10V, IE = –50mA, f = 200MHz (–30%) 200 2.2 4.7 10 R1/R2 0.8 1.0 0.2...
