UN2154

Transistors with built-in Resistor UN2154 Silicon PNP epitaxial planer transistor 2.8 –0.3 +0.2 Unit: mm 0.65±0.15 For digital circuits 0.65±0.15 1.5 –0.05 +0.25 2.9 –0.05 0.95 q q q High forward current transfer ratio hFE. Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 1.9±0.2 +0.2 s Features 0.95 1 3 1.45 0 to 0.1 2 1.1 –0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –30 –30 –100 200 150 –55 to +150 Unit V V mA mW ˚C ˚C 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector 0.8 EIAJ:SC-59 Mini Type Package Marking Symbol: EV Internal Connection R1(10kΩ) C B R2 (47kΩ) E s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = –10V, IE = 1mA, f = 200MHz Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 VCB = –30V, IE = 0 VCE = –30V, IB = 0 VEB = –3V, IC = 0 VCE = –10V, IC...