UN1596

UNISONIC TECHNOLOGIES CO., LTD UN1596 Preliminary NPN SILICON TRANSISTOR NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR „ DESCRIPTION The UTC UN1596 are series of NPN silicon planar transistor, which has gain of 500 at IC=100mA.It can be used in such applications: battery powered circuit and darlington replacement. „ FEATURES * Gain :500 @ IC=100mA * Low saturation voltage „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UN1596L-AA3-R UN1596G-AA3-R Package SOT-223 Pin Assignment 123 BCE Packing Tape Reel www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 2 QW-R207-021.b UN1596 Preliminary NPN SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 180 V Emitter-Base Voltage Collector Current VEBO 5 V IC 0.5 A Peak Pulse Current Collector Power dissipation TA=25°С ICM PC 1A 2W Junction Temperature Storage Temperature TJ TSTG +150 −55 ~ +150 °С °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Base-Emitter Turn-On Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS SY...