UN1231

Transistors with built-in Resistor UN1231/1231A Silicon NPN epitaxial planer transistor Unit: mm 6.9±0.1 2.5±0.1 1.0 For amplification of the low frequency 0.4 1.5 1.5 R0.9 R0.9 1.0±0.1 q 0.85 0.55±0.1 0.45±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage UN1231 UN1231A Symbol VCBO VCEO IC ICP PT* Tj Tstg (Ta=25˚C) Ratings 20 60 20 50 0.7 1.5 1.0 150 –55 to +150 Unit 3 2 1 2.5 2.5 V UN1231 Collector to emitter voltage UN1231A Collector current Peak collector current Total power dissipation Junction temperature Storage temperature 1:Base 2:Collector 3:Emitter M Type Mold Package V A A W ˚C ˚C R1(1kΩ) Internal Connection 1.25±0.05 C B R2 (47kΩ) * Printed circuit board: Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage UN1231 UN1231A UN1231 UN1231A (Ta=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) R1 R1/R2 Conditions VCB = 15V, IE = 0 VCE = 15V, IB = 0 VEB = 14V, IC = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 VCE = 10V, IC = 150mA* IC = 100mA, IB = 5mA* 0.7 1 0.021 *Pulse measurement 20 60 20 50 800 2100 0.4 1.3 V kΩ min typ max 1 10 0.5 Unit µA µA mA V Collector to emitter voltage 4.1±0.2 q 2.4±0.2 2.0±0.2 q High forward current transfer ratio hFE. M type mold package. Costs can be reduced through downsizing of the equipment and reduction of the number of parts. R 0. 7 4.5±0.1 s...