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UMX18N

SeCoS

dual transistors

Elektronische Bauelemente UMX18N Plastic-Encapsulated General Purpose Transistors (dual transistors) RoHS Compliant Pr...


SeCoS

UMX18N

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Elektronische Bauelemente UMX18N Plastic-Encapsulated General Purpose Transistors (dual transistors) RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z Two chips in a package. z Mounting possible with SOT-363 automatic mounting machines. z Transistor elements are independent, eliminating interference. z Mounting cost and area be cut in half. F MARKING X18 6 54 C BE 12 3 EB C DG REF. A B C D E F NPN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction & Storage temperature VCBO VCEO VEBO IC PC TJ, TSTG 15 12 6 0.5 0.15 150, -55 ~ 150 SOT-363 A E L B K 1 CH J Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. Unit V V V A W °C NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO 15 12 6 - - - V IC=10μA, IE=0 - - V IC=1mA, IB=0 - - V IE=10μA, IC=0 - 100 nA VCB=15V, IE=0 Emitter Cut-off Current IEBO 100 nA VEB=6V, IC=0 DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance hFE 27...




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