Transistors
EMX4 / UMW6N / UMW10N / UMX4N / FMW6 / FMW10 / IMX4
High transition frequency (dual transistors)
EMX4 / UMW6N / UMW10N / UMX4N / FMW6 / FMW10 / IMX4
!Features 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.95pF)
!Equivalent circuit
EMX4 / UMX4N
(3) (2) (1)
IMX4
(4) (5) (6)
UMW6N
(3) (2) (1)
FMW6
(3) (4) (5)
UMW10
(3) (2) (1)
FMW10
(3) (4) (5)
(4)
(5)
(6)
(3)
(2)
(1)
(4)
(5)
(2)
(1)
(4)
(5)
(2)
(1)
!Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation
EMX4 / UMW6N / UMW10N / UMX4N
FMW6 / FMW10 / IMX4
Symbol VCBO VCEO VEBO IC Pc Tj Tstg
Limits 30 18 3 50 150(TOTAL) 300(TOTAL) 150 −55~+150
Unit V V V mA mW
∗1 ∗2
Junction temperature Storage temperature
∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded.
°C °C
!Electrical characteristics (Ta = 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage hFE pairing Transition frequency Output capacitance
∗Transition frequency of the device.
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) hFE1 / hFE2 fT Cob
Min. 30 18 3 − − 27 − 0.5 600 −
Typ. − − − − − − − 1 1500 0.95
Max. − − − 0.5 0.5 270 0.5 2 − .