UMH8N

Transistors EMG4 / EMH4 / UMG4N / UMH4N / UMH8N / FMG4A / IMH4A / IMH8A General purpose (dual digital transistors) EMG4 / EMH4 / UMG4N / UMH4N / UMH8N FMG4A / IMH4A / IMH8A !Features 1) Two DTC114T chips in a EMT or UMT or SMT package. !Equivalent circuits EMG4 / UMG4N (3) (2) (1) EMH4 / UMH4N (3) (2) (1) UMH8N (3) (2) (1) R1 R1 R1 R1 R1 (4) (5)/(6) (4) (5) (6) R1 (4) (5) (6) FMG4A (3) (4) (5) IMH4A (4) (5) (6) IMH8A (4) (5) (6) R1 R1 R1 R1 R1 (2) (1) (3) (2) (1) R1 (3) (2) (1) !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current EMG4 / EMH4 / UMG4N / UMH4N / UMH8N Power dissipation FMG4A / IMH4A / IMH8A Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 50 50 5 100 150(TOTAL) 300(TOTAL) 150 −55~+150 Unit V V V mA mW ∗1 ∗2 Junction temperature Storage temperature ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. °C °C !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance ∗Transition frequency of the device. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT R1 Min. 50 50 5 − − − 100 − 7 Typ. − − − − − − 250 250 10 Max. − − − 0.5 0.5 0.3 600 − 13 Unit V V V µA µA V − MHz kΩ IC=50µA IC=1mA IE=50µA VCB=50...