UMF6N
Transistors
Power management (dual transistors)
UMF6N
2SA2018 and 2SK3019 are housed independently in a UMT packa...
UMF6N
Transistors
Power management (dual transistors)
UMF6N
2SA2018 and 2SK3019 are housed independently in a UMT package.
!Application Power management circuit
!External dimensions (Units : mm)
1.25 2.1
!Equivalent circuits
ROHM : UMT6 EIAJ : SC-88
(3)
(2)
(1)
Tr2
Tr1
(4)
(5)
(6)
!Packaging specifications
Type Package Marking Code Basic ordering unit (pieces) UMF6N UMT6 F6 TR 3000
0~0.1
!Structure Silicon epitaxial planar transistor
0.15
0.65
!Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.
(4)
0.65 1.3 0.7 0.9
(3)
0.2
(6)
0.1Min.
Each lead has same dimensions
(1)
2.0
(5)
(2)
1/5
UMF6N
Transistors
!Absolute maximum ratings (Ta=25°C) Tr1
Limits Symbol −15 VCBO −12 VCEO −6 VEBO −500 IC Collector current −1.0 ICP 150(TOTAL) PC Power dissipation Tj 150 Junction temperature Tstg −55~+150 Range of storage temperature Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Unit V V V mA A mW °C °C
∗1 ∗2
∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Tr2
Symbol Limits Parameter VDSS 30 Drain-source
voltage VGSS ±20 Gate-source
voltage ID 100 Continuous Drain current 200 IDP Pulsed IDR 100 Continuous Reverse drain current IDRP 200 Pulsed Total power dissipation 150(TOTAL) PD Tch 150 Channel temperature Tstg −55~+150 Range of storage temperature Unit V V mA mA mA mA mW °C °C
∗1 ∗1 ∗2
∗1 PW≤10ms Duty cycle≤5...