UMF4N

UMF4N Transistors Power management (dual transistors) UMF4N 2SA2018 and DTC123EE are housed independently in a UMT package. !Application Power management circuit !External dimensions (Units : mm) (4) !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 0.2 (3) 0.65 1.3 0.7 0.65 0.9 (6) 1.25 2.1 0~0.1 !Structure Silicon epitaxial planar transistor 0.15 0.1Min. Each lead has same dimensions !Equivalent circuits (3) (2) (1) ROHM : UMT6 EIAJ : SC-88 DTr2 R2 (4) R1 Tr1 (5) R1=2.2kΩ R2=2.2kΩ (6) !Package, marking, and packaging specifications Type Package Marking Code Basic ordering unit(pieces) UMF4N UMT6 F4 TR 3000 (1) 2.0 (5) (2) 1/4 UMF4N Transistors !Absolute maximum ratings (Ta=25°C) Tr1 Limits Symbol −15 VCBO VCEO −12 VEBO −6 IC −500 Collector current ICP −1.0 PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg −55~+150 Range of storage temperature Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Unit V V V mA A mW °C °C ∗1 ∗2 DTr2 Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Symbol Limits VCC 50 VIN −10~+20 100 IC 100 IO 150(TOTAL) PC Tj 150 Tstg −55~+150 Unit V V mA mA mW °C °C ∗1 ∗2 ∗1 Characteristics of built-in transistor. ∗2 Each terminal m...