UMC2NT1

UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the UMC2NT1 series, two complementary BRT devices are housed in the SOT–353 package which is ideal for low power surface mount applications where board space is at a premium. http://onsemi.com 3 R1 2 R2 1 R2 Q1 R1 4 Q2 5 Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel. SC–88A/SOT–323 CASE 419A STYLE 6 MARKING DIAGRAM 5 Ux 1 2 3 4 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc Ux = Device Marking x = 2, 3 or 5 THERMAL CHARACTERISTICS Thermal Resistance – Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25°C (Note 1.) RθJA TJ, Tstg PD 833 –65 to +150 *150 °C/W °C mW ORDERING INFORMATION Device UMC2...